2SD986

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 · www.datasheet4u.com DESCRIPTION ·With TO-126 package ·Complement to type 2SB794/795 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD985 VCEO Collector-emitter voltage 2SD986 VEBO IC ICM IB Emitter -base voltage Collector current Collector current-Peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open collector Open base 80 8 ±1.5 ±3.0 0.15 1.0 W V A A A CONDITIONS Open emitter VALUE 150 60 V UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SD985 CONDITIONS IC=1.0A; IB=1.0mA IC=1.0A; IB=1.0mA VCB=60V; IE=0 10 2SD986 VCB=80V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=1.0A ; VCE=2V 1000 2000 30000 2.0 mA µA MIN TYP. MAX 1.5 2.0 UNIT V V SYMBOL VCEsat VBEsat ICBO Collector cut-off current IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain Switching times ton ts tf Turn-on time Storage time Fall time IC=1.0A;IB1=-IB2=1.0mA VCC=50V; RL=...