POWER TRANSISTOR. 2SD1023 Datasheet

2SD1023 TRANSISTOR. Datasheet pdf. Equivalent

2SD1023 Datasheet
Recommendation 2SD1023 Datasheet
Part 2SD1023
Description SILICON POWER TRANSISTOR
Feature 2SD1023; SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 www.datasheet.
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Datasheet
Download 2SD1023 Datasheet




SavantIC 2SD1023
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1023
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·High DC current gain
·DARLINGTON
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-Continuous
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
200
200
7
5
8
0.5
1
30
150
-55~150
UNIT
V
V
V
A
A
A
A
W
VALUE
4.17
UNIT
/W



SavantIC 2SD1023
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A; IB=5mA
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=5mA
ICEO Collector cut-off current
VCE=200V; IB=0
ICBO Collector cut-off current
VCB=200V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=3A ; VCE=3V
fT Transition frequency
IC=0.5A ; VCE=10V
ton Turn-on time
ts Storage time
tf Fall time
IC=3A; IB=5mA
RL=10@
VBB2=4V
Product Specification
2SD1023
MIN TYP. MAX UNIT
1.5 V
2.0 V
0.1 mA
0.1 mA
5 mA
1500
30000
20 MHz
2 µs
8 µs
5 µs
2



SavantIC 2SD1023
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1023
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3







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