SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1026
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1026
www.datasheet4u.com
DESCRIPTION ·With TO-247 package ·High DC current gain ·DARLINGTON
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-Continuous Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 15 22 1 2 100 150 -55~150 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Turn-on time Storage time Fall time IC=15A; IB1=IB2=20mA RL=2?;VBB2=4V CONDITIONS IC=10A; IB=20mA IC=10A; IB=20mA VCE=100V; IB=0 VCB=100V; IE=0 VEB=7V; IC=0 IC=10A ; VCE=3V IC=1.5A ; VCE=10V 1500 MIN
www.datasheet4u.com
2SD1026
SYMBOL VCEsat VBEsat ICEO ICBO IEBO hFE fT ton ts tf
TYP.
MAX 1.5 2.0 0.1 0.1 5 30000
UNIT V V mA mA mA
20 2 5 3
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