DatasheetsPDF.com

EU1A

Galaxy Semi-Conductor

HIGH EFFICIENCY RECTIFIER

BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES www.datasheet4u.com EU1Z(Z) - - - EU1C(Z) VOLTAGE RANGE: 200---...


Galaxy Semi-Conductor

EU1A

File Download Download EU1A Datasheet


Description
BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER FEATURES www.datasheet4u.com EU1Z(Z) - - - EU1C(Z) VOLTAGE RANGE: 200--- 1000 V CURRENT: 0.25,0.5 A Low cost Diffused junction Low leakage Low forward voltage drop Easily cleaned with freon, Alcohol, lsopropand and similar solvents DO - 41 MECHANICAL DATA Case: JEDEC DO-41, molded plastic Terminals: Axial leads,solderable per MIL-STD-202, Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces, 0.34 grams Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EU1Z Maximum peak repetitive reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length Peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ IF=IF(AV) Maximum reverse current at Rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Typical thermal resistance Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F=0.5A,I R=1A,I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. EU1 400 280 400 0.25 EU1A 600 420 600 EU1C 1000 700 1000 0.5 UNITS V V V A VRRM VRMS VDC IF(AV) 200 140 200 @TA=75 IFSM VF IR trr CJ RθJL TJ TSTG...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)