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2SD1266A Dataheets PDF



Part Number 2SD1266A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD1266A Datasheet2SD1266A Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1266 Collec.

  2SD1266A   2SD1266A


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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1266 Collector-base voltage 2SD1266A 2SD1266 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SD1266A Emitter-base voltage Collector current Collector current-peak Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 35 150 -55~150 Open collector Open base 80 6 3 5 2 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter voltage 2SD1266 IC=30mA ,IB=0 2SD1266A IC=3A, IB=0.375A IC=3A ; VCE=4V VEB=6V; IC=0 2SD1266 2SD1266A 2SD1266 2SD1266A VCE=30V; IB=0 CONDITIONS www.datasheet4u.com 2SD1266 2SD1266A SYMBOL MIN 60 TYP. MAX UNIT VCEO V 80 1.2 1.8 1 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current ICEO 0.3 VCE=60V; IB=0 VCE=60V; VBE=0 0.2 VCE=80V; VBE=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A; VCE=10V,f=10MHz 70 10 30 250 mA ICES Collector cut-off current DC current gain DC current gain Transition frequency mA hFE-1 hFE-2 fT MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=1A IB1=0.1A ,IB2=-0.1A VCC=50V, 0.5 2.5 0.4 µs µs µs hFE-1 Classifications Q 70-150 P 120-250 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1266 2SD1266A Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A www.datasheet4u.com 4 .


2SD1266 2SD1266A 2SD1267


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