SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1267 2SD1267A
www.datasheet4u.com
DES...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1267 2SD1267A
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER 2SD1267 Collector-base voltage 2SD1267A 2SD1267 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SD1267A Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base 80 5 4 8 2 W 40 150 -55~150 V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD1267 IC=30mA ,IB=0 2SD1267A IC=4A, IB=0.4A IC=3A ; VCE=4V VEB=5V; IC=0 2SD1267 2SD1267A 2SD1267 2SD1267A VCE=30V; IB=0 CONDITIONS
www.datasheet4u.com
2SD1267 2SD1267A
SYMBOL
MIN 60
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 80 1.5 2.0 1.0 V V mA
VCEsat VBE IEBO
Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current
ICEO
0.7 VCE=60V; IB=0 VCE=60V; VBE=0 0.4 VCE=80V; VBE=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A; VCE=5V,f=1MHz 70 15 20 250
mA
ICES
Collector cut-off current...