2SD1270

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1270 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Large collector current IC ·Complement to type 2SB945 APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 130 80 7 5 10 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=4A; IB=0.2A IC=4A ;IB=0.2A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=0.5A;VCE=10V;f=10MHz 45 60 MIN 80 www.datasheet4u.com 2SD1270 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 0.5 1.5 10 50 V V µA µA 260 30 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2A ;IB1=0.2A ;IB2=-0.2A VCC=50...