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POWER TRANSISTOR. 2SD1270 Datasheet |
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1270
DESCRIPTION
www.data·sWheietht4uT.cOom-220Fa package
·Low collector saturation voltage
·Large collector current IC
·Complement to type 2SB945
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Ta=25
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
130
80
7
5
10
40
2
150
-55~150
UNIT
V
V
V
A
A
W
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1270
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.2A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
fT Transition frequency
IC=0.5A;VCE=10V;f=10MHz
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=2A ;IB1=0.2A ;IB2=-0.2A
VCC=50V
hFE-2 Classifications
RQP
60-120 90-180 130-260
MIN TYP. MAX UNIT
80 V
0.5 V
1.5 V
10 µA
50 µA
45
60 260
30 MHz
0.5 µs
1.5 µs
0.15 µs
2
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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1270
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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