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POWER TRANSISTOR. 2SD1271A Datasheet |
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1271 2SD1271A
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·Complement to type 2SB946/946A
·Low collector saturation voltage
·Good linearity of hFE
·Large collector current IC
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Ta=25
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
2SD1271
2SD1271A
Open emitter
Collector-emitter voltage
Emitter-base voltage
2SD1271
2SD1271A
Open base
Open collector
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
TC=25
Ta=25
Storage temperature
VALUE
130
150
80
100
7
7
15
40
2
150
-55~150
UNIT
V
V
V
A
A
w
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1271 2SD1271A
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
voltage
2SD1271
2SD1271A
IC=10mA , IB=0
VCEsat
VBEsat
Collector-emitter saturation voltage IC=5A ;IB=0.25A
Base-emitter saturation voltage
IC=5A ;IB=0.25A
ICBO
IEBO
hFE-1
hFE-2
fT
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
VCB=100V; IE=0
VEB=5V; IC=0
IC=0.1A ; VCE=2V
IC=3A ; VCE=2V
IC=0.5A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=3A ;IB1=-IB2=0.3A
VCC=50V
hFE-2 Classifications
RQP
60-120 90-180 130-260
MIN TYP. MAX UNIT
80
V
100
0.5 V
1.5 V
10 µA
50 µA
45
60 260
30 MHz
0.5 µs
1.5 µs
0.1 µs
2
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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1271 2SD1271A
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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