2SD1290

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1290 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 10 50 130 -55~130 UNIT V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA; IC=0 IC=2A; IB=0.75A IC=2A; IB=0.75A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE ts tf VF DC current gain Storage time Fall time Diode forward voltage IC=2A ; VCE=10V 3 3 MIN 5 www.datasheet4u.com 2SD1290 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 5.0 1.5 50 1 8 7 1 2.2 V V µA mA IC=2A ILeak=0.75A,LB=5µH µs µs V IF=-4A,IB=0 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1290 ...