SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package www.data...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·Low collector saturation voltage ·High speed switching ·High collector current ·Complement to type 2SB953/953A APPLICATIONS ·Power amplifiers ·Low voltage switching
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
2SD1444 2SD1444A
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SD1444 VCBO Collector-base voltage 2SD1444A 2SD1444 VCEO Collector-emitter voltage 2SD1444A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open collector Open base 40 5 7 12 30 W V A A Open emitter 50 20 V CONDITIONS VALUE 40 V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD1444 IC=10mA , IB=0 2SD1444A IC=5A; IB=0.16A IC=5A; IB=0.16A VCB=40V; IE=0 CONDITIONS
www.datasheet4u.com
2SD1444 2SD1444A
SYMBOL
MIN 20
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 40 0.6 1.5 V V
VCEsat VBEsat
Collector-emitter saturation voltage Base-emitter saturation voltage 2SD1444 2SD1444A
ICBO
Collector cut-off current
50 VCB=50V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=0.5A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 45 60 150 110 260 50
µA
IEBO hFE-1 hFE-2 fT COB
Emitter c...