2SD1486 TRANSISTOR Datasheet

2SD1486 Datasheet, PDF, Equivalent


Part Number

2SD1486

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SD1486 Datasheet


2SD1486
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1486
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·Complement to type 2SB1055
·High transition frequency fT
·Satisfactory linearity of hFE
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
120
5
6
10
70
3
150
-55~150
UNIT
V
V
V
A
A
W

2SD1486
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1486
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A
VBE Base-emitter on voltage
IC=4A ; VCE=5V
ICBO Collector cut-off current
VCB=120V; IE=0
IEBO Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE -2
DC current gain
IC=1A ; VCE=5V
hFE -3
DC current gain
IC=4A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=0.5A ; VCE=-5V
MIN TYP. MAX UNIT
2.0 V
1.8 V
50 µA
50 µA
20
40 200
20
230 pF
20 MHz
hFE-2 classifications
RQ
P
40-80
60-120 100-200
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD1486 www.datasheet4u.com DESCRIPTIO N ·With TO-3PFa package ·Complement t o type 2SB1055 ·High transition freque ncy fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATI ONS ·For high power amplifier applicat ions PINNING PIN 1 2 3 Base Collector E mitter DESCRIPTION Absolute maximum ra tings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Co llector-emitter voltage Emitter-base vo ltage Collector current Collector curre nt-peak TC=25 PC Collector power dissip ation 3 Tj Tstg Junction temperature St orage temperature 150 -55~150 CONDITION S Open emitter Open base Open collector VALUE 120 120 5 6 10 70 W UNIT V V V A A SavantIC Semiconductor Product Spe cification Silicon NPN Power Transisto rs CHARACTERISTICS Tj=25 unless otherwi se specified PARAMETER Collector-emitte r saturation voltage Base-emitter on vo ltage Collector cut-off current Emitter cut-off current DC current ga.
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