2SD1506

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1506 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 3 4.5 10 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ,IB=0 IC=50µA ,IE=0 IE=50µA ,IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=5V 56 MIN 50 60 5 www.datasheet4u.com 2SD1506 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 390 40 90 V V µA µA pF MHz hFE Cla...