2SD1553

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1553 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 2.5 1 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com 2SD1553 SYMBOL TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 5.0 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF VF Diode forward voltage IF=2.5A 1.6 2.0 V tf Fall time ICP=2A ;IB1(end)=0.6A 0.5 1.0 µs 2 SavantIC Semiconduc...