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Silicon Transistor. 2SC5665 Datasheet

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Silicon Transistor. 2SC5665 Datasheet






2SC5665 Transistor. Datasheet pdf. Equivalent




2SC5665 Transistor. Datasheet pdf. Equivalent





Part

2SC5665

Description

NPN Epitaxial Planar Silicon Transistor



Feature


Ordering number : ENN7351 2SC5665 NPN E pitaxial Planar Silicon Transistor 2SC 5665 High-Frequency Low-Noise Amplifier and OSC Applications www.datasheet4u.c om Features • • Package Dimension s • Low-noise use : NF=1.5dB typ (f =2GHz). unit : mm High cut-off frequenc y : fT=6.5GHz typ (VCE=1V). 2106A : fT= 11.2GHz typ (VCE=3V). Low operating vol tage. 0.3 3 [2SC5665] 0.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5665 Datasheet


Sanyo Semicon Device 2SC5665

2SC5665; .75 0.6 0.4 0.8 0.4 1.6 0~0.1 1 2 0. 5 0.5 1.6 0.2 0.1 1 : Base 2 : Emitt er 3 : Collector SANYO : SMCP Specific ations Absolute Maximum Ratings at Ta=2 5°C Parameter Collector-to-Base Voltag e Collector-to-Emitter Voltage Emitter- to-Base Voltage Collector Current Colle ctor Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEB O IC PC Tj Tstg Con.


Sanyo Semicon Device 2SC5665

ditions Ratings 9 4 2 70 100 150 --55 to +150 Unit V V V mA mW °C °C Marking : NK This product adopts a high-frequ ency process. Please be careful when ha ndling it beause it is susceptible to s tatic electricity. Any and all SANYO p roducts described or contained herein d o not have specifications that can hand le applications that require extremely high levels of relia.


Sanyo Semicon Device 2SC5665

bility, such as life-support systems, ai rcraft's control systems, or other appl ications whose failure can be reasonabl y expected to result in serious physica l and/or material damage. Consult with your SANYO representative nearest you b efore using any SANYO products describe d or contained herein in such applicati ons. SANYO assumes no responsibility fo r equipment failur.

Part

2SC5665

Description

NPN Epitaxial Planar Silicon Transistor



Feature


Ordering number : ENN7351 2SC5665 NPN E pitaxial Planar Silicon Transistor 2SC 5665 High-Frequency Low-Noise Amplifier and OSC Applications www.datasheet4u.c om Features • • Package Dimension s • Low-noise use : NF=1.5dB typ (f =2GHz). unit : mm High cut-off frequenc y : fT=6.5GHz typ (VCE=1V). 2106A : fT= 11.2GHz typ (VCE=3V). Low operating vol tage. 0.3 3 [2SC5665] 0.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5665 Datasheet




 2SC5665
Ordering number : ENN7351
www.datasheet4u.com
2SC5665
NPN Epitaxial Planar Silicon Transistor
2SC5665
High-Frequency Low-Noise Amplifier
and OSC Applications
Features
Package Dimensions
Low-noise use
: NF=1.5dB typ (f=2GHz).
High cut-off frequency : fT=6.5GHz typ (VCE=1V).
: fT=11.2GHz typ (VCE=3V).
Low operating voltage.
unit : mm
2106A
[2SC5665]
0.75
0.3 0.6
3
0~0.1
12
0.5 0.5
1.6
0.2
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : NK
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
9
4
2
70
100
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62503 TS IM TA-3753 No.7351-1/7




 2SC5665
2SC5665
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
www.datasheet4u.com
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
Conditions
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
S21e2 1
S21e2 2
NF
VCB=5V, IE=0
VEB=1V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=5mA
VCE=3V, IC=30mA
VCB=1V, f=1MHz
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz
VCE=3V, IC=30mA, f=2GHz
VCE=1V, IC=5mA, f=2GHz
Ratings
min typ
100
5 6.5
9.5 11.2
0.95
0.7
56
7.0 8.5
1.5
max
1.0
10
160
1.2
0.9
2.3
Unit
µA
µA
GHz
GHz
pF
pF
dB
dB
dB
IC -- VCE
50
0.30mA
40
0.25mA
30 0.20mA
0.15mA
20
0.10mA
10 0.05mA
0
0
1000
7
5
3
2
100
7
5
3
2
IB=0
12345
Collector-to-Emitter Voltage, VCE -- V IT04829
hFE -- IC
VCE=3V
1V
10
3 5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector Current, IC -- mA
IT04831
10 Cob -- VCB
f=1MHz
7
5
3
2
1.0
7
5
3
2
0.1
0.1
23
5 7 1.0
23
5 7 10
Collector-to-Base Voltage, VCB -- V IT04833
IC -- VBE
70
60
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT04830
fT -- IC
3
2
VCE=3V
10
1V
7
5
3
2
1.0
1.0
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
23
5 7 10
23
Collector Current, IC -- mA
Cre -- VCB
5 7 100
IT04832
f=1MHz
23
5 7 1.0
23
5 7 10
Collector-to-Base Voltage, VCB -- V IT04834
No.7351-2/7




 2SC5665
16 S21e2 -- IC
14 VCE=3V
1V
12
www.datasheet41u0 .com
8
6
4
2
1.0 2
5.0
VCE=1V
4.5 f=2GHz
3 5 7 10
23
Collector Current, IC -- mA
NF -- IC
4.0
3.5
3.0
2.5 Zs=50
2.0 Zs=Zsopt
1.5
1.0
0.5
0
1.0
120
23
5 7 10
23
Collector Current, IC -- mA
PC -- Ta
2SC5665
f=1GHz
5 7 100
IT04835
5 7 100
IT04837
S21e2 -- IC
12
f=2GHz
10
VCE=3V
8
1V
6
4
2
0
1.0
23
5 7 10
23
Collector Current, IC -- mA
NF -- IC
5.0
4.5
4.0
3.5
3.0
2.5
2.0 Zs=Zsopt
1.5
1.0
0.5
0
1.0
23
5 7 10
23
Collector Current, IC -- mA
5 7 100
IT04836
VCE=3V
f=2GHz
5 7 100
IT04838
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04839
No.7351-3/7



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