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1SS404 Datasheet, Equivalent, Barrier Type.Silicon Epitaxial Schottky Barrier Type Silicon Epitaxial Schottky Barrier Type |
| Part | 1SS404 |
|---|---|
| Description | Silicon Epitaxial Schottky Barrier Type |
| Feature | 1SS404
TOSHIBA Diode Silicon Epitaxial S chottky Barrier Type
1SS404
High Speed Switching Applications
www. datasheet4u . com Unit: mm • • • • Two-pi n small packages are suitable for highe r mounting densities Low forward voltag e : VF (3) = 0. 38 V (typ. ) Low reverse current: IR = 50 μA (max) Small total capacitance: CT = 46 pF (typ. ) Absolut e Maximum Ratings (Ta = 25°C) Characte ristics Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power d issipation Junction temperature Storage temperature range Operating temperatur e range Symbol VRM VR IF . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | 1SS404 |
|---|---|
| Description | Silicon Epitaxial Schottky Barrier Type |
| Feature | 1SS404
TOSHIBA Diode Silicon Epitaxial S chottky Barrier Type
1SS404
High Speed Switching Applications
www. datasheet4u . com Unit: mm • • • • Two-pi n small packages are suitable for highe r mounting densities Low forward voltag e : VF (3) = 0. 38 V (typ. ) Low reverse current: IR = 50 μA (max) Small total capacitance: CT = 46 pF (typ. ) Absolut e Maximum Ratings (Ta = 25°C) Characte ristics Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power d issipation Junction temperature Storage temperature range Operating temperatur e range Symbol VRM VR IF . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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