SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
www.datasheet4u.com
DES...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1562 2SD1562A
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·Complement to type 2SB1085/1085A ·High transition frequency APPLICATIONS ·For low freuqency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL PARAMETER 2SD1562 VCBO Collector-base voltage 2SD1562A 2SD1562 VCEO Collector-emitter voltage 2SD1562A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open collector Open base 160 5 1.5 3.0 20 W V A A Open emitter 160 120 V CONDITIONS VALUE 120 V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD1562 IC=1mA; IB=0 2SD1562A 2SD1562 IC=50µA; IE=0 2SD1562A IE=50µA; IC=0 IC=1 A;IB=0.1 A IC=1 A;IB=0.1 A VCB=120V; IE=0 VEB=4V; IC=0 2SD1562 hFE DC current gain 2SD1562A fT COB Transition frequency Output capacitance IE=-0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=5V CONDITIONS
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2SD1562 2SD1562A
SYMBOL
MIN 120
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 160 120 V 160 5 2.0 1.5 1.0 1.0 60 60 80 20 320 200 MHz pF V V V µA µA
V(BR)CBO
Collector-base breakdown voltage
V(BR)EBO VCEsat VBEsat ICBO IEBO
Emitter-base breakdown v...