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POWER TRANSISTOR. 2SD1577 Datasheet

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POWER TRANSISTOR. 2SD1577 Datasheet






2SD1577 TRANSISTOR. Datasheet pdf. Equivalent




2SD1577 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SD1577

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD1577 www.datasheet4u.com DESCRIPTIO N ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high spe ed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Abs olute maximum ratings(Ta=25 ) SYMBOL VC BO VCEO VEBO IC ICM IB.
Manufacture

SavantIC

Datasheet
Download 2SD1577 Datasheet


SavantIC 2SD1577

2SD1577; PC Tj Tstg PARAMETER Collector-base vol tage Collector-emitter voltage Emitter- base voltage Collector current Collecto r current-peak Base current Collector p ower dissipation Junction temperature S torage temperature TC=25 CONDITIONS Ope n emitter Open base Open collector VALU E 1500 700 6 5 17 3.5 100 150 -55~150 U NIT V V V A A A W SavantIC Semiconduct or Product Specif.


SavantIC 2SD1577

ication Silicon NPN Power Transistors 2SD1577 CHARACTERISTICS www.datasheet4 u.com Tj=25 unless otherwise specifie d PARAMETER Collector-emitter saturatio n voltage Base-emitter saturation volta ge Emitter-base breakdown voltage CONDI TIONS IC=4.5A ;IB=2A IC=4.5A ;IB=2A IE= 1mA ;IC=0 VCB=750V; IE=0 6 50 1 50 4 15 MIN TYP. MAX 2.0 1.3 UNIT V V V µA mA µA SYMBOL VCEsat .


SavantIC 2SD1577

VBEsat V(BR)EBO ICBO Collector cut-off current VCB=1500V; IE=0 IEBO hFE Emi tter cut-off current DC current gain V EB=5V; IC=0 IC=2A ; VCE=10V Switching times tstg tf Storage time Fall time 11 1 µs µs IC=4A; LB=10µH IBend=1.5A 2 SavantIC Semiconductor Product Spe cification Silicon NPN Power Transisto rs PACKAGE OUTLINE www.datasheet4u.com 2SD1577 Fig.2 Outli.

Part

2SD1577

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD1577 www.datasheet4u.com DESCRIPTIO N ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high spe ed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Abs olute maximum ratings(Ta=25 ) SYMBOL VC BO VCEO VEBO IC ICM IB.
Manufacture

SavantIC

Datasheet
Download 2SD1577 Datasheet




 2SD1577
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1577
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·Wide area of safe operation
·High voltage,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
6
5
17
3.5
100
150
-55~150
UNIT
V
V
V
A
A
A
W




 2SD1577
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1577
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2A
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
ICBO Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=2A ; VCE=10V
Switching times
tstg Storage time
tf Fall time
IC=4A; LB=10µH
IBend=1.5A
MIN TYP. MAX UNIT
2.0 V
1.3 V
6V
50 µA
1 mA
50 µA
4 15
11 µs
1 µs
2




 2SD1577
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1577
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3



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