2SD1677

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1677 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·High reliability ·Fast speed APPLICATIONS ·For TV horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 100 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 2.5 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=4.5A ;IB=2A IC=4.5A ;IB=2A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V 8 MIN 800 6 www.datasheet4u.com 2SD1677 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 5.0 1.5 10 10 V V µA µA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1677 Fig.2 outline dimensions (unindicated tolerance:±0.1mm...