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T0812xH Dataheets PDF



Part Number T0812xH
Manufacturers SGS-Thomson
Logo SGS-Thomson
Description Standard Triacs
Datasheet T0812xH DatasheetT0812xH Datasheet (PDF)

® www.datasheet4u.com T0810xH T0812xH STANDARD TRIACS FEATURES IT(RMS) = 8A VDRM = 400V to 800V High surge current capability A1 A2 G DESCRIPTION The T08xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conductionangle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for f.

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® www.datasheet4u.com T0810xH T0812xH STANDARD TRIACS FEATURES IT(RMS) = 8A VDRM = 400V to 800V High surge current capability A1 A2 G DESCRIPTION The T08xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conductionangle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 500 mA diG /dt = 1 A/µs. Tc= 95 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 8 77 70 24 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs Unit A A TO220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125°C 400 Voltage M 600 S 700 N 800 Unit V 1/5 T0810xH / T0812xH THERMAL RESISTANCES Symbol www.datasheet4u.com Parameter Junction to ambient Junction to case for D.C Junction to case for A.C 360 ° conduction angle (F=50Hz) Value 60 4 3 Unit °C/W °C/W °C/W Rth(j-a) Rth(j-c) Rth(j-c) GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG = 500mA IT = 11A dIG/dt = 3A/µs IT= 250 mA Gate open IG= 1.2 IGT Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 10 25 1.5 0.2 2 12 50 mA V V µs Unit IGM = 4 A (tp = 20 µs) IH * IL Tj= 25°C Tj= 25°C I-III-IV II MAX TYP TYP MAX MAX MAX MIN MIN 25 25 50 1.65 5 2 200 2 50 50 100 mA mA VTM * IDRM IRRM dV/dt * (dV/dt)c * ITM= 11A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 3.5 A/ms Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C Tj= 110°C V µA mA 500 5 V/µs V/µs * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION T TRIAC MESA GLASS CURRENT 2/5 08 10 SENSITIVITY M H PACKAGE : H = TO220 Non-insulated VOLTAGE ® T0810xH / T0812xH Fig.1 : Maximum RMS power dissipation versus RMS on-state current. www.datasheet4u.com Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (o C) Rth = 0 o C/W 2.5 o C/W o 5 C/W 7.5 o C/W P (W) 12 10 8 o 180 O 12 = 180 = 120 = 90 o o 10 8 -95 -100 -105 6 4 2 0 0 1 = 60 = 30 o o 6 4 -110 -115 -120 Tamb (oC) I T(RMS) (A) 2 3 4 5 6 7 8 2 0 0 20 40 60 80 100 120 -125 140 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 10 8 6 = 180 o Zt h( j-c) 0.1 Zt h( j-a) 4 2 Tcase( C) 0 0 10 20 30 40 50 .


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