MS1003

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1003 www.datasheet4u.com RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 36 4.0 20 270 +200 -65 to +150 Unit V V V V A W °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.65 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1003 www.datasheet4u.com STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50mA IC = 100mA IC = 100mA IE = 10mA VCE = 15V VCE = 5V Test Conditions IE = 0mA VBE = 0V ...