MS1008

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1008 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS IMD = –30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4.0 10 233 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction-Case Thermal Resistance 0.75 °C/W Rev A 11/2005 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1008 www.datasheet4u.com STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVCBO BVCES BVCEO BVEBO ICEO ICES hFE hFE,, MS1008A IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 60V VCE = 6V VCE = 6V Test Conditions IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0 mA IE = 0mA IC = 1.4A IC = 1.4A Min. 110 11...