MS1077
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P RODUCT P REVIEW
DESCRIPTION
www.datasheet4u.com
KEY FEATURES...
MS1077
RF PRODUCTS DIVISION
RF & MICROWAVE
TRANSISTORS
P RODUCT P REVIEW
DESCRIPTION
www.datasheet4u.com
KEY FEATURES
W W W . Microsemi . COM
The MS1077 is a Class AB epitaxial silicon
NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Optimized for SSB !" 30 MHz !" 28 Volts !" IMD –30dB !" Common Emitter !" Gold Metallization !" POUT = 130 W PEP !" GP = 12 dB Gain !"
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
HF SSB Applications !"
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol VCBO VCEO VEBO IC PDISS TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value 70 35 4.0 12 175 +200 -65 to +150
Unit V V V A W °C °C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
1.0
°C/W
MS1077
Copyright 2000 MSC1610.PDF 2000-11-06
Microsemi
RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
MS1077
RF PRODUCTS DIVISION
RF & MICROWAVE
TRANSISTORS
P RODUCT P REVIEW
W W W . Microsemi . COM
www.datasheet4u.com
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C
Symbol BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IE = 20 mA VCE =35 V VCE = 5 V
Test Conditions VBE = 0 V IB = 0 mA IC = 0 mA...