POWER TRANSISTOR. 2SD1718 Datasheet

2SD1718 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SD1718
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1718 www.datasheet.
Manufacture SavantIC
Datasheet
Download 2SD1718 Datasheet



2SD1718
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1718
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPL package
·Complement to type 2SB1163
·Excellent linearity of hFE
·Wide area of safe operation (ASO)
·High transition frequency fT
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
180
180
5
15
25
3.5
150
150
-55~150
UNIT
V
V
V
A
A
W



2SD1718
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1718
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A
VBE Base-emitter voltage
IC=8A ; VCE=5V
ICBO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=180V; IE=0
VEB=3V; IC=0
IC=20mA ; VCE=5V
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=8A ; VCE=5V
fT Transition frequency
COB Collector output capacitance
IC=0.5A ; VCE=5V
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
2.5 V
1.8 V
50 µA
50 µA
20
60 200
20
20 MHz
230 pF
hFE-2 classifications
QS
60-100
80-160
P
100-200
2





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