POWER TRANSISTOR. 2SD1763 Datasheet

2SD1763 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SD1763
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1763 www.datasheet.
Manufacture SavantIC
Datasheet
Download 2SD1763 Datasheet



2SD1763
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1763
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·High breakdown voltage VCEO
·Complement to type 2SB1186
·High transition frequency
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
120
5
2
3
20
150
-55~150
UNIT
V
V
V
A
A
W



2SD1763
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1763
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA , IC=0
VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.1A
ICBO Collector cut-off current
VCB=100V IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=0.1A ; VCE=5V
fT Transition frequency
IE=-0.1A ; VCE=5V
Cob Output capacitance
IE=0 ; VCB=10V ,f=1MHz
MIN TYP. MAX UNIT
120 V
120 V
5V
0.4 V
1.5 V
1 µA
1 µA
100 320
80 MHz
20 pF
hFE Classifications
EF
100-200 160-320
2





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