POWER TRANSISTOR. 2SD1765 Datasheet

2SD1765 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SD1765
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1765 www.datasheet.
Manufacture SavantIC
Datasheet
Download 2SD1765 Datasheet



2SD1765
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1765
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
100
100
6
2
3
20
2
150
-55~150
UNIT
V
V
V
A
A
W



2SD1765
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1765
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-base breakdown voltage
IC=50µA; IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0
VCEsat Collector-emitter saturation voltage IC=1A ;IB=1mA
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1A ; VCE=2V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
100 V
100 V
1.5 V
10 µA
3.0 mA
1000
10000
25 pF
2





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