SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1765
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD1765
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 6 2 3 20 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
www.datasheet4u.com
2SD1765
SYMBOL
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=50µA; IC=0
100
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA;IB=0
100
V
VCEsat
Collector-emitter saturation voltage
IC=1A ;IB=1mA
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=1A ; VCE=2V
1000
10000
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
25
pF
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
PACKAGE OUTLINE
www.datasheet4u.com
2SD1765
Fig.2 Outline dimensions (u...