POWER TRANSISTOR. 2SD1772 Datasheet

2SD1772 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SD1772
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A www..
Manufacture SavantIC
Datasheet
Download 2SD1772 Datasheet



2SD1772
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1772 2SD1772A
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·Complement to type 2SB1192/1192A
·Large collector power dissipation
APPLICATIONS
·For power amplification
·For TV vertical deflection output
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Ta=25
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
2SD1772
2SD1772A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
Ta=25
VALUE
200
150
180
6
1
2
25
2
150
-55~150
UNIT
V
V
V
A
A
w



2SD1772
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1772 2SD1772A
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1772
2SD1772A
IC=5mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.5mA , IC=0
VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA
VBE Base-emitter on voltage
IC=300mA ; VCE=10V
ICBO Collector cut-off current
VCB=200V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=100mA ; VCE=10V
hFE-2
DC current gain
IC=300mA ; VCE=10V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=100mA ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
150
V
180
6V
1.0 V
1.0 V
50 µA
50 µA
60 240
50
27 pF
20 MHz
hFE-1 Classifications
QP
60-140
100-240
2





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