2SD1975

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A www.datasheet4u.com DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLICATIONS ·For high power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2SD1975 Collector-base voltage 2SD1975A 2SD1975 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SD1975A Emitter-base voltage Collector current Collector current-peak Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 150 150 -55~150 Open collector Open base 200 5 15 25 3.5 W V A A Open emitter 200 180 V CONDITIONS VALUE 180 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Emitter-base voltage 2SD1975 2SD1975A CONDITIONS IC=10A ;IB=1A IC=8A ; VCE=5V VCB=180V; IE=0 www.datasheet4u.com 2SD1975 2SD1975A SYMBOL VCEsat VBE MIN TYP. MAX 2.5 1.8 UNIT V V ICBO Collector cut-off current 50 VCB=200V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 60 20 20 200 200 50 µA IEBO hFE-1 hFE-2 hFE-3 fT COB Emitter cut-off current DC current gain DC c...