2SD1985

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD1985 2SD1985A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SD1985 VCBO Collector-base voltage 2SD1985A 2SD1985 VCEO Collector-emitter voltage 2SD1985A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open collector Open base 80 6 3 5 25 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SD1985 IC=30mA , IB=0 2SD1985A IC=3A;IB=0.375A VCE=4V;IC=3A 2SD1985 2SD1985A 2SD1985 2SD1985A VCE=60V;IB=0 200 VCE=80V;IB=0 VCE=30V;IB=0 300 VCE=60V;IB=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A; VCE=5V;f=10MHz 70 10 30 MHz 1 250 mA µA µA 80 1.2 1.8 V V CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL VCEO VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current ICES ICEO Collector...