2SD2066

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2066 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 120 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 12 2.5 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA; IB=0 IC=8A; IB=0.8A IC=8A;VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 60 15 MIN 160 www.datasheet4u.com 2SD2066 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX UNIT V 2.0 1.8 50 50 V V µA µA 200 20 210 MHz pF hFE-2 Classifications Q 60-120 P 100-200 2 Savan...