2SD2196

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2196 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High DC current gain ·DARLINGTON PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 200 7 15 22 1 2 65 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.92 UNIT /W 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50m A;IB=0 IC=10 A;IB=30mA IC=10 A;IB=30mA VCB=200V; IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=10A ; VCE=3V IC=1.5A ; VCE=10V 1500 MIN 200 www.datasheet4u.com 2SD2196 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT TYP. MAX UNIT V 1.5 2.0 0.1 0.1 5 30000 20 V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage tim...