Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2251
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DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 7 20 60 W UNIT V V V A A
1
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Fall time CONDITIONS IC=100mA; IB=0 IC=5 A;IB=1A IC=5 A;IB=1A VCB=800V; IE=0 VCE=1500V ;RBE=0 VEB=4V; IC=0 IC=5A ; VCE=5V IC=1A ; VCE=5V IEC=7A; IB=0 IC=4A;RL=50@ IB1=0.8A;-IB2=1.6A;VCC=200V 0.1 40 5 8 MIN 800
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2SD2251
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 VF tf
TYP.
MAX
UNIT V
5 1.5 10 1.0 130 8
V V µA mA mA
2.0 0.3
V µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
2SD2251
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2251
www.datasheet4u.com
4
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