Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2335
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DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 600 5 7 1.5 100 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=100mA , IB=0 IE=200mA , IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=800V IE=0 IC=1A ; VCE=5V IF=6A 8 MIN 600 5
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2SD2335
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO hFE VF
TYP.
MAX
UNIT V V
5.0 1.5 10
V V µA
2.0
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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2SD2335
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
.