2SD2553

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2553 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1200 600 5 8 16 4 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2553 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IC=400mA ;IB=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=1200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IF=8A IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 66 8 5 1.6 155 2 0.9 MIN 5 5 1.2 1 200 28 9 2.0 V pF MHz TYP. MAX UNIT V V V mA mA SYMBOL V(B...