2SD2634

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2634 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 20 65 W UNIT V V V A A 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Fall time CONDITIONS IC=100mA; IB=0 IC=4.5A;IB=0.9A IC=4.5A;IB=0.9A VCB=800V; IE=0 VCE=1500V ;RBE=0 VEB=4V; IC=0 IC=5A ; VCE=5V IC=1A ; VCE=5V IEC=7A IC=3A;RL=66.7A IB1=0.6A;-IB2=1.2A;VCC=200V 40 5 10 MIN 800 www.datasheet4u.com 2SD2634 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 VF tf TYP. MAX UNIT V 3 1.5 10 1.0 130 8 V V µA mA mA 2 0.3 V µs 2 Savant...