(PDF) BD131 Datasheet PDF | SavantIC





BD131 Datasheet PDF

Part Number BD131
Description SILICON POWER TRANSISTOR
Manufacture SavantIC
Total Page 3 Pages
PDF Download Download BD131 Datasheet PDF

Features: Datasheet pdf SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors B D131 www.datasheet4u.com DESCRIPTION ·Complement to type BD132 ·With TO-12 6 package ·High current (Max: 3A) ·Lo w voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PIN NING PIN 1 2 3 DESCRIPTION Emitter Coll ector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBO L VCBO VCEO VEBO IC ICM IBM PT Tj Tstg PARAMETER Collector-base voltage Collec tor-emitter voltage Emitter -base volta ge Collector current (DC) Collector cur rent-Peak Base current-Peak Total power dissipation Junction temperature Stora ge temperature Tmb660 Open emitter Open base Open collector CONDITIONS VALUE 7 0 45 6 3 6 0.5 15 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMB OL Rth j-a Rth j-mb PARAMETER Thermal r esistance from junction to ambient Ther mal resistance from junction to mountin g base VALUE 100 6 UNIT K/W K/W Savant IC Semiconductor Product Specification Silicon NPN Power Transisto.

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BD131 datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD131
DESCRIPTION
www.data·sCheoemt4pu.lceomment to type BD132
·With TO-126 package
·High current (Max: 3A)
·Low voltage (Max: 45V)
APPLICATIONS
·For general purpose power applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter -base voltage
Collector current (DC)
ICM Collector current-Peak
IBM Base current-Peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb660
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb Thermal resistance from junction to mounting base
VALUE
70
45
6
3
6
0.5
15
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
6
UNIT
K/W
K/W

BD131 datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD131
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat-1 Collector-emitter saturation voltage IC=0.5A; IB=50mA
VCEsat-2 Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat-1 Base-emitter saturation voltage
IC=0.5A; IB=50mA
VBEsat-2 Base-emitter saturation voltage
IC=2A; IB=0.2A
ICBO Collector cut-off current
VCB=50V; IE=0
VCB=50V; IE=0 Tj=150
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=12V
40
hFE-2
DC current gain
IC=2A ; VCE=1V
20
fT Transition frequency
IC=0.25A; VCE=5V ;f=100MHz 60
0.3 V
0.7 V
1.2 V
1.5 V
50 nA
10 µA
50 nA
MHz
2





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