DME800

DME800 800 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz www.datasheet4u.com GENERAL DESCRIPTION The DME800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width and duty required for DME applications. The device has gold thin-film metalization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55ST-1 (Common Base) ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 2500 Device Dissipation @25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3 Collector Current (Ic) 50 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pg ηc RL Tr Pd VSWR CHARACTERISTICS Power Out Power Gain Collector Efficiency Return Loss Rise Time Pulse Droop Load Mismatch Tolerance 1 TEST CONDITIONS Pulse Width = 10 µs, Pin = 100 Watts Vcc = 50 Volts F = 1025-1150 MHz Long Term Duty Factor = 1% MIN 800 9.0 40 -9 TYP MAX 1000 10.0 UNITS W dB % dB 200 0.7 3.0:1 ns dB F = 1025 MHz FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc2 NOTES: Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance 1. At rated output power and pulse conditions 2. At rated pulse conditions Ie = 20 mA Ic = 50 mA Vce = 5V...