KEF00F0000CM-EG00

OneNANDTM256 / OneNANDTM512 FLASH MEMORY www.datasheet4u.com OneNANDTMMCP SPECIFICATION NAND Density 256Mb NAND T.B.D KEF00F0000CM-EG00 KEF00F0000CM-SG00 512Mb NAND KEC00C00CM-EGG0 KEC00C00CM-SGG0 T.B.D 2.6V(2.4V~2.8V) 2.6V(2.4V~2.8V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Part No. VCC_core 1.8V(1.7V~1.95V) 2.6V(2.4V~2.8V) VCC_IO 1.8V(1.7V~1.95V) 2.6V(2.4V~2.8V) T.B.D 63FBGA(LF) 63FBGA 63FBGA(LF) 63FBGA T.B.D PKG Version: Ver. 0.0 Date: April 4, 2003 1 OneNANDTM256 / OneNANDTM512 1. FEATURES Design Technology: 0.25µm www.datasheet4u.com Voltage Supply - Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) - Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) Organization - Host Interface:16bit Internal BufferRAM - BootRAM at booting, Cache-like at normal operation FLASH MEMORY ♦ Architecture ♦ Performance Host Interface type - Synchronous Random Read : Clock Frequency: up to 45MHz @30pF - Synchronous Burst Read : Clock Frequency: up to 45MHz @30pF : Burst Length: 4 words/ 8 words/ 16 words/ 32 words/ Continuous Linear Burst(2K words) - Asynchronous Random Read - Asynchronous Page Read: 4words - Asynchronous Random Write Programmable Read latency 2Bit EDC / 1Bit ECC Multiple Reset - Cold Reset / Warm Reset / Hot Reset Internal Bootloader Itelligent Data Protection Unique ID - Detail information can be obtained by contact with Samsung ♦ Software Handshaking Feature Interface Chip ID Read - Detailed chip informat...