(PDF) BD132 Datasheet PDF | SavantIC





BD132 Datasheet PDF

Part Number BD132
Description SILICON POWER TRANSISTOR
Manufacture SavantIC
Total Page 3 Pages
PDF Download Download BD132 Datasheet PDF

Features: Datasheet pdf SavantIC Semiconductor Product Specific ation Silicon PNP Power Transistors B D132 www.datasheet4u.com DESCRIPTION ·Complement to type BD131 ·With TO-12 6 package ·High current (Max:- 3A) ·L ow voltage (Max: -45V) APPLICATIONS ·F or general purpose power applications P INNING PIN 1 2 3 DESCRIPTION Emitter Co llector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYM BOL VCBO VCEO VEBO IC ICM IBM Pt Tj Tst g PARAMETER Collector-base voltage Coll ector-emitter voltage Emitter -base vol tage Collector current (DC) Collector c urrent-Peak Base current-Peak Total pow er dissipation Junction temperature Sto rage temperature Tmb560 Open emitter Op en base Open collector CONDITIONS VALUE -45 -45 -4 -3 -6 -0.5 15 150 -65~150 U NIT V V V A A A W THERMAL CHARACTERIST ICS SYMBOL Rth j-a Rth j-mb PARAMETER T hermal resistance from junction to ambi ent Thermal resistance from junction to mounting base VALUE 100 6 UNIT K/W K/W SavantIC Semiconductor Product Specification Silicon PNP Power T.

Keywords: BD132, datasheet, pdf, SavantIC, SILICON, POWER, TRANSISTOR, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

BD132 datasheet
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD132
DESCRIPTION
www.dat·aCshoemet4pule.cmoment to type BD131
·With TO-126 package
·High current (Max:- 3A)
·Low voltage (Max: -45V)
APPLICATIONS
·For general purpose power applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IBM
Pt
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb560
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
-45
-45
-4
-3
-6
-0.5
15
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
6
UNIT
K/W
K/W

BD132 datasheet
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD132
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBEsat-1 Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
VBEsat-2 Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.3 V
-0.7 V
-1.2 V
-1.5 V
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=-50V; IE=0
VCB=-50V; IE=0 Tj=150
VEB=-5V; IC=0
IC=-0.5A ; VCE=-12V
IC=-2A ; VCE=-1V
40
20
-50 nA
-10 µA
-50 nA
fT Transition frequency
IC=-0.25A; VCE=-5V ;f=100MHz 60
MHz
2





Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)