POWER TRANSISTOR. BD142 Datasheet

BD142 TRANSISTOR. Datasheet pdf. Equivalent

Part BD142
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD142 www.datasheet4u.
Manufacture SavantIC
Datasheet
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BD142
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD142
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·Low collector saturation voltage
·High dissipation rating
APPLICATIONS
·LF large signal power amplification
·Intended for a wide variety of intermediate
power applications.
·Suited for use in audio and inverter circuits
at 12V
PINNING (See Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
45
45
7
15
7
117
-65~200
-65~200
UNIT
V
V
V
A
A
W
MAX
1.5
UNIT
/W



BD142
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD142
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=200mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A
VBE Base-emitter on voltage
IC=4A;VCE=4V
ICEX Collector cut-off current
VCE=100V;VBE=-1.5V
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=4V
hFE-2
DC current gain
IC=0.5A ; VCE=4V
MIN TYP. MAX UNIT
45 V
45 V
7V
1.1 V
1.5 V
2 mA
1 mA
12.5 160
20
2





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