POWER TRANSISTOR. BD175 Datasheet

BD175 TRANSISTOR. Datasheet pdf. Equivalent

Part BD175
Description (BD175 - BD179) SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 www.
Manufacture SavantIC
Datasheet
Download BD175 Datasheet



BD175
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD175 BD177 BD179
DESCRIPTION
www.dat·aWshiethet4TuO.co-1m26 package
·Complement to type BD176/178 /180
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD175
VCBO
Collector-base voltage BD177
BD179
BD175
VCEO
Collector-emitter voltage BD177
BD179
VEBO
Emitter -base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
45
60
80
45
60
80
5
3
7
30
150
-65~150
UNIT
V
V
V
A
A
W



BD175
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD175 BD177 BD179
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBE Base-emitter on voltage
IC=1A ; VCE=2V
VCEO(SUS)
Collector-emitter
sustaining voltage
BD175
BD177 IC=0.1A; IB=0
BD179
ICBO
IEBO
hFE-1
hFE-2
fT
BD175 VCB=45V; IE=0
Collector cut-off current BD177 VCB=60V; IE=0
BD179 VCB=80V; IE=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=150mA ; VCE=2V
DC current gain
IC=1A ; VCE=2V
Transition frequency
IC=250mA; VCE=10V
hFE-1 Classifications
6 10
40-100
63-160
16
100-250
MIN TYP. MAX UNIT
0.8 V
1.3 V
45
60 V
80
100 µA
1 mA
40 250
15
3 MHz
classification 16 :only BD175
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)