SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD175 BD177 BD179
www.datasheet4u.com
DE...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
BD175 BD177 BD179
www.datasheet4u.com
DESCRIPTION ·With TO-126 package ·Complement to type BD176/178 /180 APPLICATIONS ·For medium power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER BD175 VCBO Collector-base voltage BD177 BD179 BD175 VCEO Collector-emitter voltage BD177 BD179 VEBO IC ICM PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 45 60 80 5 3 7 30 150 -65~150 V A A W V V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage BD175 VCEO(SUS) Collector-emitter sustaining voltage BD177 BD179 BD175 ICBO Collector cut-off current BD177 BD179 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VEB=5V; IC=0 IC=150mA ; VCE=2V IC=1A ; VCE=2V IC=250mA; VCE=10V IC=0.1A; IB=0 CONDITIONS IC=1A; IB=0.1A IC=1A ; VCE=2V
www.datasheet4u.com
BD175 BD177 BD179
SYMBOL VCEsat VBE
MIN
TYP.
MAX 0.8 1.3
UNIT V V
45 60 80 V
100
µA
1 40 15 3 250
mA
MHz
hFE-1 Classifications 6 40-100 10 63-...