POWER TRANSISTOR. BD180 Datasheet

BD180 TRANSISTOR. Datasheet pdf. Equivalent

Part BD180
Description (BD176 - BD180) SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 www.
Manufacture SavantIC
Datasheet
Download BD180 Datasheet



BD180
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD176 BD178 BD180
DESCRIPTION
www.datWashitehetT4uO.c-o1m26 package
·Complement to type BD175 /177 /179
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD176
VCBO
Collector-base voltage BD178
BD180
BD176
VCEO
Collector-emitter voltage BD178
BD180
VEBO
Emitter -base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-45
-60
-80
-45
-60
-80
-5
-3
-7
30
150
-65~150
UNIT
V
V
V
A
A
W



BD180
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD176 BD178 BD180
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE Base-emitter on voltage
IC=-1A ; VCE=-2V
VCEO(SUS)
Collector-emitter
sustaining voltage
BD176
BD178 IC=-0.1A; IB=0
BD180
ICBO
IEBO
hFE-1
hFE-2
fT
BD176 VCB=-45V; IE=0
Collector cut-off current BD178 VCB=-60V; IE=0
BD180 VCB=-80V; IE=0
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
IC=-150mA ; VCE=-2V
DC current gain
IC=-1A ; VCE=-2V
Transition frequency
IC=-250mA; VCE=-10V
hFE-1 Classifications
6 10
40-100
63-160
16
100-250
MIN TYP. MAX UNIT
-0.8 V
-1.3 V
-45
-60 V
-80
-100
µA
-1 mA
40 250
15
3 MHz
classification 16 :only BD176
2





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