POWER TRANSISTOR. BD190 Datasheet

BD190 TRANSISTOR. Datasheet pdf. Equivalent

Part BD190
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-12.
Manufacture SavantIC
Datasheet
Download BD190 Datasheet



BD190
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD190
DESCRIPTION
·With TO-126 package
www.dat·aHshigeeht4cuu.crorment
·Complement to type BD189
APPLICATIONS
·For use in 5 to 10 watt audio amplifiers
utilizing complementary or quasi
complementary circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
Pt
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter -base voltage
Collector current (DC)
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb770
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance, junction to case
VALUE
-70
-60
-5
-4
-2
40
-65~150
-65~150
UNIT
V
V
V
A
A
W
VALUE
3.12
UNIT
/W



BD190
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD190
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(SUS)CEO Collector-emitter sustaining voltage IC=-0.1A; IB=0
VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A
-60 V
-1.0 V
VBE Base-emitter on voltage
IC=-2A ; VCE=-2V
-1.5 V
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=-70V; IE=0
VEB=-5V; IC=0
IC=-0.5A ; VCE=-2V
IC=-2A ; VCE=-2V
-0.1 mA
-1.0 mA
40
15
fT Transition frequency
IC=-1.0A; VCE=-10V ;f=1.0MHz
2.0
MHz
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)