BD245B

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BD246/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD245/A/B/C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER BD245 VCBO Collector-base voltage BD245A BD245B BD245C BD245 VCEO Collector-emitter voltage BD245A BD245B BD245C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 55 70 90 115 45 60 80 100 5 10 15 3 80 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD245/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C 80 100 IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A ; VCE=4V IC=10A ; VCE=4V VCE=30V; IB=0 0.7 BD245B/245C VCE=60V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=10A ; VCE=4V 40 20 4 1.0 mA mA 1.0 4.0 1.6 3.0 V V V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL VCEO(BR) VCEsat-1 VCEsat-2 VBE-1 VBE-2 Coll...