BD246B

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD246/A/B/C www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Complement to type BD245/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER BD246 VCBO Collector-base voltage BD246A BD246B BD246C BD246 VCEO Collector-emitter voltage BD246A BD246B BD246C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base CONDITIONS VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -10 -15 -3 80 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD246/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD246 Collector-emitter breakdown voltage BD246A IC=30mA ;IB=0 BD246B BD246C -80 -100 IC=-3A ;IB=-0.3A IC=-10A ;IB=-2.5A IC=-3A ; VCE=-4V IC=-10A ; VCE=-4V VCE=-30V; IB=0 -0.7 BD246B/246C VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-10A ; VCE=-4V 40 20 4 -1 mA mA -1.0 -4.0 -1.6 -3.0 V V V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL VCEO VCEsat-1 VCEsa...