BD250

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Complement to type BD249/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER BD246 VCBO Collector-base voltage BD246A BD246B BD246C BD246 VCEO Collector-emitter voltage BD246A BD246B BD246C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Collector emitter CONDITIONS VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -25 -40 -5 125 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD250 Collector-emitter breakdown voltage BD250A IC=-30mA ;IB=0 BD250B BD250C -80 -100 IC=-15A ;IB=-1.5A IC=-25A ;IB=-5A IC=-15A ; VCE=-4V IC=-25A ; VCE=-4V VCE=-30V IB=0 -1.0 BD250B/250C VCE=-60V IB=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-25A ; VCE=-4V 25 10 5 -1.0 mA mA -1.8 -4.0 -1.6 -3.0 V V V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL V(BR)...