Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD317
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DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD318 APPLICATIONS ·Designed for high power amplifiers
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 16 20 5 200 -65~200 -65~200 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=8A ;IB=0.8A IC=8A ;IB=0.8A IC=8A ;VCE=2.0V VCB=100V;IE=0 VEB=7V; IC=0 IC=5A ; VCE=4V IC=10A ; VCE=4V IC=1A ; VCE=20V,f=0.5MHz 25 15 1.0 MIN 100 TYP.
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BD317
SYMBOL VCEO(SUS) VCEsat VBEsat VBE(on) ICBO IEBO hFE-1 hFE-2 fT
MAX
UNIT V
1.0 1.8 1.5 1.0 1.0
V V V mA mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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BD317
Fig.2 Outline dimensions
3
.