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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD534/536/538
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DESCRIPTION ·With TO-220C package ·Complement to type BD533/535/537 ·Low saturation voltage APPLICATIONS ·For medium power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER BD534 VCBO Collector-base voltage BD536 BD538 BD534 VCEO Collector-emitter voltage BD536 BD538 VEBO IC IE IB PC Tj Tstg Emitter-base voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitterCONDITIONS VALUE -45 -60 -80 -45 -60 -80 -5 -8 -8 -1 50 150 -65~150 V A A A W V V UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD534/536/538
CHARACTERISTICS
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Tj=25
unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BD534 CONDITIONS IC=-2 A;IB=-0.2 A IC=-6 A;IB=-0.6 A IC=-2A ; VCE=-2V VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 VCE=-80V; VBE=0 VEB=5V; IC=0 BD534/536 20 IC=-10mA ; VCE=-5V BD538 15 IC=-0.5A ; VCE=-2V Group: J IC=-2A ; VCE=-2V Group: K Group: J IC=-3A ; VCE=-2V Group: K IC=-0.5A ; VCE=-1V 20 3 12 MHz 40 15 100 40 30 75 -1 mA -0.1 mA -0.1 mA -0.8 -1.5 MIN TYP. MAX -0.8 UNIT V V V
SYMBOL VCEsat-1 VCEsat-2 VBE
ICBO
Collector cut-off current
BD536 BD538 BD534
ICES
Collector cut-off current
BD536 BD538
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain DC current gain (All device)
hFE-3
hFE-4
DC current gain (All device) Transition frequency
fT
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
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BD534/536/538
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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