BD712

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type BD707/709/711 APPLICATIONS ·Intented for use in power linear and switching applications. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD708 BD710 BD712 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD708 VCBO Collector-base voltage BD710 BD712 BD708 VCEO Collector-emitter voltage BD710 BD712 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Total dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -12 -18 -5 75 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.67 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD708 CONDITIONS MIN -60 IC=-0.1A, IB=0 -80 -100 IC=-4A ,IB=-0.4A IC=-4A , VCE=-4V BD708 VCB=-60V, IE=0 TC=150 VCB=-80V, IE=0 TC=150 VCB=-100V, IE=0 TC=150 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2A ; VCE=-2V IC=-4A ; VCE=-4V BD708 40 30 15 5 IC=-10A ; VCE=-4V 10 8 8 IC=-0.3A;VCE=-3V; 3 MHz 150 120 -1.0 400 mA -0.1 mA -1.0 -1.5 -0.1 -1.0 -0.1 -1.0 -0.1 -1.0 mA V V V TYP. MAX UNIT SYMBOL ...