Transistor. 2SD965A Datasheet

2SD965A Transistor. Datasheet pdf. Equivalent

Part 2SD965A
Description Transistor
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors www.datas.
Manufacture Jiangsu
Datasheet
Download 2SD965A Datasheet



2SD965A
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
www.datasheet4u.com
2SD965A TRANSISTOR (NPN)
FEATURES
z Audio amplifier
z Flash unit of camera
z Switching circuit
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
7V
IC
Collector Current -Continuous
5
A
PC Collector Power Dissipation 750 mW
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Out capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE’(2)
hFE(3)
VCE(sat)
fT
Cob
Test conditions
IC=0.1mA, IE=0
IC= 1mA. IB=0
IE= 10μA, IC=0
VCB= 10V,IE=0
VEB=7V, IC=0
VCE= 2 V, IC=1mA
VCE= 2V, IC = 500mA
VCE= 2V, IC =2A
IC=3A, IB=0.1A
VCE=6V, IC=50mA
VCB=20 V , IE=0, f=1MHZ
MIN
40
30
7
230
150
TYP
200
150
MAX
0.1
0.1
UNIT
V
V
V
μA
μA
800
1V
MHz
50 pF
CLASSIFICATION OF hFE(2)
Rank
Q
Range
230-380
R
340-600
S
560-800



2SD965A
Typical Characteristics
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2SD965A





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