POWER TRANSISTOR. BD939F Datasheet

BD939F TRANSISTOR. Datasheet pdf. Equivalent

Part BD939F
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD939F www.datasheet4.
Manufacture SavantIC
Datasheet
Download BD939F Datasheet



BD939F
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD939F
DESCRIPTION
www.dat·aWshiethet4Tu.Oco-m220F package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
100
7
3
6
14
150
-50~150
UNIT
V
V
V
A
A
W



BD939F
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD939F
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT Transition frequency
VCB=120V; IE=0
VEB=7V; IC=0
IC=0.2A ; VCE=4V
IC=1A ; VCE=4V
IC=0.25A ; VCE=10V
MIN TYP. MAX UNIT
100 V
7V
0.7 V
1.5 V
50 µA
50 µA
40 250
15
3 MHz
2





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